HYNIX SEMICONDUCTOR, INC., Hynix Semiconductor America, Inc., Plaintiffs,
v.
UNITED STATES, Defendant, and
Infineon Technologies, North America Corp., and Micron Technology, Inc., Defendant-Intervenors.
United States Court of International Trade.https://leagle.com/images/logo.png
April 13, 2006.
April 13, 2006.
Attorney(s) appearing for the Case
Willkie, Farr & Gallagher LLP (James P. Durling, Daniel L. Porter) for Plaintiffs Hynix Semiconductor Inc. and Hynix Semiconductor America Inc.
Peter D. Keisler, Assistant Attorney General; David M. Cohen, Director; Ada Elsie Bosque, Commercial Litigation Branch, Civil Division, U.S. Department of Justice; Neal J. Reynolds, Office of the General Counsel, U.S. International Trade Commission (Mary Jane Alves), for Defendant United States.
Collier, Shannon, Scott, PLLC, Washington, DC (Kathleen W. Cannon) for Defendant-Intervenor Infineon Technologies North America Corp.
King & Spalding LLP, Washington, DC (Gilbert B. Kaplan, Cris R. Revaz) for Defendant-Intervenor Micron Technology, Inc.
United States Court of International Trade.
OPINION
GOLDBERG, Senior Judge.
In this action, Plaintiffs Hynix Semiconductor Inc. and Hynix Semiconductor America Inc. (together, "Hynix") challenge the final affirmative material injury determination made by the United States International Trade Commission ("ITC") pursuant to 19 U.S.C. § 1671d(b) with respect to dynamic random access memory semiconductors of one megabit or above ("DRAMS"), published under...
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